The GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters.

Features

1. Advanced Structure:
   • Developed using a proprietary trench gate field-stop design.
2. Efficiency Maximization:
   • Balances conduction and switching losses.
3. Safe Paralleling:
   • Tight parameter distribution ensures secure parallel operation.
4. Fast Recovery Diode:
   • Enhances performance in antiparallel applications.

Applications

• Photovoltaic Inverters:
  • Optimize energy conversion in solar power systems.
• High-Frequency Converters:
  • Efficiently handle variable frequencies.

Technical Specifications

• Voltage Rating: 650 V
• Continuous Collector Current: 80 A (TC = 100 °C)
• Junction Temperature: Up to 175 °C