IGBT – Insulated Gate Bipolar Transistor

An IGBT (Insulated Gate Bipolar Transistor) is a high-efficiency, high-speed semiconductor switch that combines the advantages of MOSFETs (high input impedance, fast switching) and BJTs (high current handling and low saturation voltage).

IGBTs are widely used in power electronics applications due to their ability to handle large voltages and currents with minimal loss. They are essential in inverters, motor drives, renewable energy systems, welding equipment, UPS systems, and electric vehicles.

Key Characteristics of IGBT:

• High Voltage Handling (typically 600V–1700V or more)

• High Current Capability

• Low Conduction and Switching Losses

• Fast Switching Speeds

• Gate Controlled (like a MOSFET), but conducts like a BJT

• Built-in Diode in most modern IGBT modules for reverse current flow

Common Applications:

• Solar and wind power inverters

• Electric vehicle powertrains

• Variable frequency drives (VFDs)

• High-power SMPS (Switch Mode Power Supplies)

• Induction heating and welding machines