Description
The Copy GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters.
Features
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Advanced Structure:
- Developed using a proprietary trench gate field-stop design.
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Efficiency Maximization:
- Balances conduction and switching losses.
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Safe Paralleling:
- Tight parameter distribution ensures secure parallel operation.
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Fast Recovery Diode:
- Enhances performance in antiparallel applications.
Applications
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Photovoltaic Inverters:
- Optimize energy conversion in solar power systems.
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High-Frequency Converters:
- Efficiently handle variable frequencies.
Technical Specifications
- Voltage Rating: 650 V
- Continuous Collector Current: 80 A (TC = 100 °C)
- Junction Temperature: Up to 175 °C
🌐 Applications
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🌞 Photovoltaic Inverters – Maximize solar energy efficiency
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⚙️ Variable Frequency Drives (VFDs) – For industrial motor control
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🔄 High-Frequency Converters – In telecom, UPS, and energy storage systems
📦 Package Includes
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1 × GW80H65 IGBT Module
650V IGBT module, 80A IGBT, aaaa, fast recovery diode IGBT, GW80H65, HB series IGBT, high-frequency converter transistor, inv ok, photovoltaic inverter IGBT, power electronics transistor, si, solar power IGBT, trench gate IGBT, VFD IGBT module
Product Of The Year: