FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package
Product Description:
The FGA50N100BNTD2 is a high-performance 1000V, 50A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Built using trench-gate and NPT (Non-Punch Through) technology, this IGBT delivers excellent efficiency, fast switching speeds, and rugged reliability.
It features a built-in ultra-fast recovery diode, making it well-suited for hard-switching circuits such as UPS systems, welding machines, motor drives, and industrial inverters. With a low saturation voltage (typically 2.5V) and strong surge current capability, the FGA50N100BNTD2 offers superior thermal and electrical performance in a compact TO-3P package.
⚙️ Key Specifications
| Parameter | Specification |
|---|---|
| Collector–Emitter Voltage (V<sub>CES</sub>) | 1000 V alldatasheet.com+7mouser.com+7in.element14.com+7 |
| Collector Current (I<sub>C</sub>) | 50 A @ 25 °C; 35 A @ 100 °C |
| Pulsed Collector Current (I<sub>CM</sub>) | 200 A |
| Saturation Voltage (V<sub>CE(sat)</sub>) | 2.5 V @ 60 A typical; 2.9 V max |
| Gate–Emitter Voltage (V<sub>GE</sub>) | ±25 V max |
| Turn-On Delay (t<sub>d(on)</sub>) | 34 ns; Rise Time 68 ns |
| Turn-Off Delay (t<sub>d(off)</sub>) | 243 ns; Fall Time 65–100 ns |
| Gate Charge (Q<sub>g</sub>) | 257 nC typical |
| Power Dissipation (P<sub>D</sub>) | 156 W @ 25 °C; 63 W @ 100 °C |
| Junction Temperature (T<sub>j</sub>) | –55 °C to +150 °C |
| Package | TO‑3P (TO‑3 plastic), 3-pin through-hole |
⚙️ Typical Applications:
-
Uninterruptible Power Supplies (UPS)
-
Welding equipment and induction heaters
-
High-voltage industrial inverters
-
Motor control systems
-
General-purpose high-power switching applications
Package includes:
1x Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package
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