Product Description:
The FGY160T65SPD-F085 is a high-performance Field-Stop Trench IGBT designed for demanding industrial and automotive applications. Rated at 650 volts and 160 amps, it combines low conduction loss with high-speed switching and excellent thermal efficiency. It also integrates a soft, fast-recovery diode for enhanced performance in half-bridge and inverter circuits.
Engineered for reliability and efficiency, this IGBT offers low saturation voltage, fast switching, and rugged short-circuit capability. It is AEC-Q101 qualified, making it a dependable choice for automotive powertrain systems, industrial inverters, EV charging stations, and motor drives.
Key Features:
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Collector-Emitter Voltage: 650V
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Collector Current: 160A continuous, 240A max at 25°C
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Pulsed Collector Current: Up to 480A
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Saturation Voltage (V<sub>CE(sat)</sub>): Typically 1.6V at 160A
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Gate-Emitter Voltage: ±20V (Threshold ~5V)
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Maximum Junction Temperature: 175°C
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Switching Speeds:
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Turn-on Delay: ~53ns
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Turn-off Delay: ~98ns
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Rise/Fall Time: ~197ns / ~141ns
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Switching Energy:
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Turn-on Energy: ~12.4mJ
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Turn-off Energy: ~5.7mJ
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Power Dissipation: Up to 882W
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Thermal Resistance (R<sub>θJC</sub>): 0.17°C/W
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Built-in Diode: Soft and fast recovery
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Package Type: TO-247-3LD
Typical Applications:
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EV powertrains and electric vehicle inverters
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Industrial motor drives
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UPS systems
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Welding machines
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High-efficiency DC/AC power conversion
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Battery charging stations (EV chargers)
The package includes:
1 x Onsemi 160A 650V FGY160T65SPD Onsemi IGBT
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