Description
SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package
This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2300DS-T1-GE3, SI2300DS-T1-BE3, SI2300-TP, SI2300, 2300, N-Channel Mosfet, 30V N-Channel Mosfet, 3A N-Channel Mosfet.
Features/Specs:
- Manufacturer Part No: SI2300DS
- Manufacturer: Vishay
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 30V
- Continuous Drain Current: 3.6 A
-
Drain-Source Resistance: 68 mOhms
Gate-Source Voltage: -12V ~ +12V - Gate-Source Threshold Voltage: 1.5V
- Gate Charge: 3 nC
- Power Dissipation: 1.7 W
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 11 ns
- Rise Time: 15 ns
- Typical Turn-Off Delay Time: 20 ns
- Typical Turn-On Delay Time: 10 ns
- Operating Temperature Range: – 55°C ~ +150°C
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
Applications:
- Switching high-power devices
- Control the speed of motors
- LED dimmers or flashers
- High-Speed switching applications
- Converters or Inverter circuits
Datasheet: SI2300DS
Package Includes:
- 1 x SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package
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