SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package

This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2300DS-T1-GE3, SI2300DS-T1-BE3, SI2300-TP, SI2300, 2300, N-Channel Mosfet, 30V N-Channel Mosfet, 3A N-Channel Mosfet.

Features/Specs:

• Manufacturer Part No: SI2300DS
• Manufacturer: Vishay
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 3.6 A
• Drain-Source Resistance: 68 mOhms
  Gate-Source Voltage: -12V ~ +12V
• Gate-Source Threshold Voltage: 1.5V
• Gate Charge: 3 nC
• Power Dissipation: 1.7 W
• Channel Mode: Enhancement
• Configuration: Single
• Fall Time: 11 ns
• Rise Time: 15 ns
• Typical Turn-Off Delay Time: 20 ns
• Typical Turn-On Delay Time: 10 ns
• Operating Temperature Range: – 55°C ~ +150°C
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3

Applications:

• Switching high-power devices
• Control the speed of motors
• LED dimmers or flashers
• High-Speed switching applications
• Converters or Inverter circuits

Datasheet: SI2300DS

Package Includes:

• 1 x SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package