SI2300 2300 30V 3.6A N-Channel SMD MOSFET SOT-23

SI2300 2300 30V 3.6A N-Channel SMD MOSFET SOT-23

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Description

SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package

This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2300DS-T1-GE3, SI2300DS-T1-BE3, SI2300-TP, SI2300, 2300, N-Channel Mosfet, 30V N-Channel Mosfet, 3A N-Channel Mosfet.

Features/Specs:

  • Manufacturer Part No: SI2300DS
  • Manufacturer: Vishay
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.6 A
  • Drain-Source Resistance: 68 mOhms
    Gate-Source Voltage: -12V ~ +12V
  • Gate-Source Threshold Voltage: 1.5V
  • Gate Charge: 3 nC
  • Power Dissipation: 1.7 W
  • Channel Mode: Enhancement
  • Configuration: Single
  • Fall Time: 11 ns
  • Rise Time: 15 ns
  • Typical Turn-Off Delay Time: 20 ns
  • Typical Turn-On Delay Time: 10 ns
  • Operating Temperature Range: – 55°C ~ +150°C
  • Mounting Style: SMD/SMT
  • Package/Case: SOT-23-3

Applications:

  • Switching high-power devices
  • Control the speed of motors
  • LED dimmers or flashers
  • High-Speed switching applications
  • Converters or Inverter circuits

Datasheet: SI2300DS

Package Includes:

  • 1 x SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package
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