NCE 75TD120 IGBT MOSFET Power Semiconductor
NCE 75TD120 IGBT MOSFET Power Semiconductor

NCE 75TD120 IGBT MOSFET Power Semiconductor

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Description

NCE 75TD120: A Powerful and Versatile Solution

The NCE 75TD120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the NCE 75TD120 is an ideal choice for a wide range of applications, including:

  • Motor control
  • Power supplies
  • Inverters
  • Solar power systems
  • Uninterruptible power supplies (UPS)

Key Benefits of the NCE 75TD120 IGBT

  • Fast switching speed for efficient power conversion
  • High current capacity to handle demanding loads
  • Low on-state voltage for reduced power losses
  • Rugged construction for reliability and durability
  • Wide operating temperature range for versatile applications

Technical Specifications

Parameter Value
Collector-Emitter Breakdown Voltage (VCE(sus)) 1200 V
Collector Current (IC) 75 A
Collector-Emitter Saturation Voltage (VCE(sat)) 1.8 V (typ)
Input-Output Capacitance (Ciss) 1500 pF
Junction Temperature (Tj) -40°C to +150°C

Package Includes

  • 1 x NCE 75TD120 IGBT

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