Irfp150a Advanced Power Mosfet

IRFP150A Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
032 Ω (Typ.
) Ο IRFP150A BVDSS = 100 V RDS(on) = 0.
04 Ω ID = 43 A TO-3P 1 2 3 1.
Gate 2 .
Drain 3.
Source Absolute Maximum Rat ings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic D rain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 43 30.
4 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Dra .