The HCS60R150S is a high-performance N-Channel Super Junction MOSFET designed for high-efficiency power switching applications. Featuring a breakdown voltage of 600V and a low on-resistance of 0.15Ω, this component is engineered to minimize power loss and improve thermal performance.

Encased in a fully isolated TO-220F package, it offers excellent insulation and is easy to mount on heat sinks without requiring additional insulating kits. This transistor is widely used in AC-DC power supplies, LED lighting drivers, and PFC (Power Factor Correction) circuits.

Key Features:

• High Voltage Capability: 600V Drain-Source Voltage (VDS).

• Low On-Resistance: RDS(on) of typically 150mΩ (0.15Ω) ensures high efficiency and reduced heat generation.

• Fast Switching: Optimized for high-frequency switching applications.

• Robust Design: 100% avalanche tested for reliability.

• Package Type: TO-220F (Full Pack) – Plastic encapsulated body for electrical isolation.

Applications:

• Switch Mode Power Supplies (SMPS)

• Uninterruptible Power Supplies (UPS)

• PFC (Power Factor Correction) stages

• LED Lighting Drivers

• Motor Control Circuits

• Solar Inverters

Technical Specifications:

• Part Number: HCS60R150S

• Type: N-Channel MOSFET

• Drain-Source Voltage (Vdss): 600V

• Continuous Drain Current (Id): ~20A - 25A (Depends on thermal management)

• RDS(on): 0.15Ω (Max)

• Gate Charge (Qg): Low gate charge for fast switching

• Mounting Type: Through Hole

• Package / Case: TO-220F (Isolated)

Package Includes:

• 1 x HCS60R150S 600V Power MOSFET