Unlock high-efficiency power management for your electronic projects with the YJD50N06A, a robust N-Channel Enhancement Mode Power MOSFET. Designed to handle demanding loads, this component features a breakdown voltage of 60V and a continuous drain current of 50A.

Housed in a compact TO-252 (DPAK) surface-mount package, this MOSFET is engineered for low on-resistance and fast switching speeds, making it an excellent choice for miniaturized power supply designs and motor control circuits. Whether you are repairing an inverter or building a DIY drone controller, the YJD50N06A offers the thermal stability and reliability required for modern electronics.

Key Features:

• High Performance: Capable of handling 60V and 50A, suitable for medium to high-power applications.

• Low RDS(on): Low static drain-source on-resistance ensures minimal power loss and high efficiency.

• Fast Switching: Optimized for high-frequency switching applications.

• Compact Design: TO-252 (DPAK) SMD package saves valuable PCB space while offering good heat dissipation.

• Reliability: High avalanche ruggedness for durable circuit designs.

Applications:

• DC-DC Converters

• Motor Drivers (Brushless and Brushed DC)

• Solenoid and Relay Drivers

• Power Supply Switching

• Battery Management Systems (BMS)

• Automotive Electronics

Technical Specifications:

• Part Number: YJD50N06A

• Type: N-Channel MOSFET

• Drain-Source Voltage ($V_{DSS}$): 60V

• Continuous Drain Current ($I_D$): 50A

• Package Type: TO-252 (DPAK/SMD)

• Mounting Type: Surface Mount

Package Includes:

• 1 x YJD50N06A N-Channel MOSFET