Ygd75n65u1 IGBT Power Semiconductor
Description
Ygd75n65u1 IGBT: A Powerful and Versatile Solution
The Ygd75n65u1 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the Ygd75n65u1 is an ideal choice for a wide range of applications, including:
- Motor control
- Power supplies
- Inverters
- Solar power systems
- Uninterruptible power supplies (UPS)
Key Benefits of the Ygd75n65u1 IGBT
- Fast switching speed for efficient power conversion
- High current capacity to handle demanding loads
- Low on-state voltage for reduced power losses
- Rugged construction for reliability and durability
- Wide operating temperature range for versatile applications
Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCE(sus)) | 1600 V |
| Collector Current (IC) | 75 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.8 V (typ) |
| Input-Output Capacitance (Ciss) | 1500 pF |
| Junction Temperature (Tj) | -40°C to +150°C |
Package Include
- 1 x YGD75N65U1 IGBT Transistor
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