Description
The WM008N70EM is an N-channel super junction power MOSFET manufactured by Wayon Electronics, part of their WMOS™ 3rd generation super junction MOSFET family. It's housed in the surface-mount D2PAK (TO-263) package, providing a low-profile footprint with a metal tab for efficient heat dissipation when soldered to a PCB with adequate copper area or heatsink.
Built using charge balance technology, this MOSFET is engineered for extremely low on-resistance and low gate charge — key traits of super junction MOSFET design that reduce both conduction and switching losses. As part of Wayon's "700V, 0.8Ω" product line (based on the datasheet family this part belongs to), it's rated for 700V drain-source voltage, making it well suited for high-voltage offline switching applications.
Wayon is a well-established manufacturer (founded 1996) specializing in super junction MOSFETs, TVS diodes, PPTC, and related protection components, with ISO9001, ISO14001, and IATF16949 certifications — giving confidence in build quality and reliability for this part.
Key Specifications
- Type: N-Channel Super Junction Power MOSFET (WMOS™ 3rd Gen)
- Manufacturer: Wayon Electronics
- Package Marking: Wayon WM008N70EM
- Package: D2PAK / TO-263 (surface mount, 3-lead + tab)
- Drain-Source Voltage (VDS): 700V
- On-Resistance (RDS(on)): ~0.8Ω (per part family designation)
- Low gate charge for reduced switching losses
- Charge-balance super junction technology
Common Applications
- Offline switch-mode power supplies (SMPS)
- LED driver circuits
- High-voltage switching power adapters
- General high-voltage power conversion applications
Package Includes
- 1 x Wayon WM008N70EM N-Channel MOSFET
