Power your applications with the GT60M324 60M324 IGBT. This high-performance power transistor offers exceptional performance and reliability for various electronic circuits.

Key Features:

• High-speed switching: Typical fall time of 0.11µs
• Fast recovery diode (FRD)
• Low saturation voltage
• High junction temperature (175°C)
• Wide operating voltage range (900V)
• High current capability (60A)

Specifications:

• Collector-emitter voltage (VCES): 900V

• Gate-emitter voltage (VGES): ±25V

• DC collector current (IC): 60A

• Pulse collector current (ICP): 120A  
• DC diode forward current (IF): 15A
• Pulse diode forward current (IFP): 120A
• Collector power dissipation (PC): 254W
• Junction temperature (Tj): 175°C
• Storage temperature range (Tstg): -40 to 175°C

Applications:

• Power converters
• Motor drives
• Inverters
• Switching power supplies
• Other high-power electronic circuits