Buy Used Toshiba GT60M324 60M324 IGBT Transistor - Collector Current, Saturation Voltage | Fast Recovery Diode – digilog.pk

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Used Toshiba GT60M324 60M324 IGBT Transistor - a close-up of the black, three-pin electronic component held in a hand with the model number clearly visible.

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Used Toshiba GT60M324 60M324 IGBT Transistor

Rs 160

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Power your applications with the GT60M324 60M324 IGBT. This high-performance power transistor offers exceptional performance and reliability for various electronic circuits.

Key Features:

High-speed switching: Typical fall time of 0.11µs
Fast recovery diode (FRD)
Low saturation voltage
High junction temperature (175°C)
Wide operating voltage range (900V)
High current capability (60A)

Specifications:

Collector-emitter voltage (VCES): 900V

Gate-emitter voltage (VGES): ±25V

DC collector current (IC): 60A

Pulse collector current (ICP): 120A
DC diode forward current (IF): 15A
Pulse diode forward current (IFP): 120A
Collector power dissipation (PC): 254W
Junction temperature (Tj): 175°C
Storage temperature range (Tstg): -40 to 175°C

Applications:

Power converters
Motor drives
Inverters
Switching power supplies
Other high-power electronic circuits

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