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Used Toshiba Gt60m324 60m324 Igbt Transistor

Used Toshiba Gt60m324 60m324 Igbt Transistor

Rs 150 PKR
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Description

Power your applications with the GT60M324 60M324 IGBT. This high-performance power transistor offers exceptional performance and reliability for various electronic circuits.

Key Features:

  • High-speed switching: Typical fall time of 0.11µs
  • Fast recovery diode (FRD)
  • Low saturation voltage
  • High junction temperature (175°C)
  • Wide operating voltage range (900V)
  • High current capability (60A)

Specifications:

    • Collector-emitter voltage (VCES): 900V

    • Gate-emitter voltage (VGES): ±25V

    • DC collector current (IC): 60A

  • Pulse collector current (ICP): 120A  
  • DC diode forward current (IF): 15A
  • Pulse diode forward current (IFP): 120A
  • Collector power dissipation (PC): 254W
  • Junction temperature (Tj): 175°C
  • Storage temperature range (Tstg): -40 to 175°C

Applications:

  • Power converters
  • Motor drives
  • Inverters
  • Switching power supplies
  • Other high-power electronic circuits
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3, aaaa, inv ok, si
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