Product Description:

BGM160T65SD is a high-performance IGBT (Insulated Gate Bipolar Transistor) with advanced 650V TrenchFS technology, designed for applications that demand high efficiency and reliability. This IGBT features low conduction and switching losses, positive temperature coefficient, and an integrated soft and fast recovery anti-parallel diode, making it ideal for use in automotive motor drives.

Key Highlights:

• Voltage rating: 650V

• Current rating: 160A

• Low V_CE(sat): 1.6V

• Short circuit withstand time: 5μs

• Max junction temperature: 175°C

• Optimized for motor control and inverter circuits

This component is widely used in electric vehicles (EV), industrial inverters, and high-efficiency power modules.

Package Information:

• Package Type: TO-247 Plus (TO247-3)

• Marking: 160T65SD