Description
Marked "TRS8A65F" on the package with Toshiba's logo, this is Toshiba's TRS8A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor. It's rated 650V/8A in a 2-pin (2+Tab) TO-220F-L package. The package layout is cathode on pin 1, anode on pin 2, in the TO-220F-2L outline.

As with Toshiba's broader SiC Schottky diode range, it's suited for high-efficiency, high-speed switching applications, offering low-loss and high-efficiency power conversion, low leakage current, high-speed switching, and recovery characteristics that are independent of temperature. Reverse recovery time (trr) is effectively 0ns, a hallmark of SiC Schottky technology versus silicon fast-recovery diodes.

Key Specifications

• Type: Silicon Carbide (SiC) Schottky Barrier Diode
• Manufacturer: Toshiba Semiconductor and Storage
• Package Marking: TRS8A65F
• Package: TO-220F-2L, isolated, 2-pin (2+tab), through-hole
• Reverse Voltage: 650V 
• Forward Current: 8A 
• Reverse Recovery Time (trr): 0ns
• Pin Configuration: Pin 1 = Cathode, Pin 2 = Anode 

Common Applications

• High-efficiency, high-speed switching applications
• Switch-mode power supplies (SMPS)
• PFC boost diode stages
• DC-DC converters requiring low switching loss

Package Includes

• 1 x Toshiba TRS8A65F SiC Schottky Barrier Diode (TO-220F-2L)