Description

The TK65A10N1 is a N-channel power MOSFET manufactured by Toshiba, built using their U-MOSVIII-H silicon N-channel MOS process. It's housed in the TO-220SIS through-hole package, and designed primarily for switching voltage regulator applications where low conduction loss and high current handling are essential.

This MOSFET is rated for 100V drain-source voltage and a high 65A continuous drain current, with a very low drain-source on-resistance of just RDS(on) = 4.0mΩ (typ.) / 4.8mΩ (max) at VGS = 10V — giving excellent conduction efficiency and minimal power loss even under heavy current loads. Its low RDS(on) combined with a gate threshold voltage of around 4V (max) makes it well suited for high-efficiency, high-current switching designs.

With a maximum power dissipation of 45W and a junction temperature rating up to 150°C, the TK65A10N1 offers solid thermal headroom for demanding power conversion applications, including DC-DC converters, switching voltage regulators, motor drivers, and battery management/protection circuits.

Key Specifications

• Type: N-Channel Enhancement-Mode Power MOSFET
• Manufacturer: Toshiba
• Package: TO-220SIS (3-lead, through-hole)
• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 65A
• Gate-Source Voltage (VGS): ±20V max
• RDS(on): 4.0mΩ (typ.) / 4.8mΩ (max) @ VGS = 10V
• Gate Threshold Voltage (VGS(th)): ~4V max
• Total Gate Charge (Qg): 81nC
• Max Power Dissipation (PD): 45W
• Max Junction Temperature (Tj): 150°C

Common Applications

• Switching voltage regulators
• DC-DC converters
• Motor drivers and battery management systems
• High-current, low-voltage power switching circuits

Package Includes

• 1 x Toshiba TK65A10N1 N-Channel MOSFET (TO-220SIS)