Description

The TK16A60W is a silicon N-channel power MOSFET manufactured by Toshiba, built using their DTMOS IV super junction structure. It's housed in the TO-220SIS through-hole package and designed primarily for switching voltage regulator applications.

This MOSFET is rated for 600V drain-source voltage and a continuous drain current of 15.8A, with a low typical on-resistance of RDS(ON) = 0.16Ω (typ.) / 0.19Ω @10V, achieved through its super junction structure. It offers an enhancement-mode gate threshold of 2.7V to 3.7V, making it easy to control via standard gate switching, and is 100% avalanche tested for reliable, robust performance with minimal lot-to-lot variation.

With a solid balance of high voltage handling, low conduction losses, and strong avalanche energy capability (rated at 231mJ single-pulse avalanche energy), the TK16A60W is well suited for demanding high-voltage switching applications where efficiency and reliability are critical.

Key Specifications

• Type: N-Channel Power MOSFET (DTMOS IV, Super Junction)
• Manufacturer: Toshiba
• Package Marking: K16A60W
• Package: TO-220SIS (3-lead, through-hole)
• Drain-Source Voltage (VDSS): 600V
• Continuous Drain Current (ID): 15.8A
• RDS(on): 0.16Ω typ. / 0.19Ω @ VGS=10V
• Gate Threshold Voltage (Vth): 2.7V–3.7V
• Single-Pulse Avalanche Energy (Eas): 231mJ
• Power Dissipation (PD): 40W
• Max Channel Temperature (Tch): 150°C
• 100% avalanche tested

Common Applications

• Switching voltage regulators
• High-voltage switch-mode power supplies
• Motor drive and industrial power conversion
• General high-voltage switching circuits

Package Includes

• 1 x Toshiba TK16A60W N-Channel MOSFET (TO-220SIS)