Description

Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1, part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in a fully isolated TO-220SIS (TO-220F equivalent) plastic package, designed specifically for low-voltage, high-current switching applications.

It features an extremely low drain-source on-resistance ($R_{DS(ON)}$), low gate charge ($Q_g$), and excellent switching speed, making it exceptionally well-suited for efficient power conversion and motor drive circuits.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (U-MOS IV)

• Manufacturer: Toshiba

• Package Marking: K40A10N1

• Package: TO-220SIS (Isolated 3-pin through-hole)

• Drain-Source Voltage ($V_{DSS}$): 100V

• Drain Current ($I_D$): 40A (Continuous, $T_C = 25^\circ\text{C}$)

• Pulsed Drain Current ($I_{DP}$): 120A

• Gate-Source Voltage ($V_{GSS}$): $\pm 20\text{V}$ max

• Gate Threshold Voltage ($V_{GS(th)}$): 2.0V to 4.0V

• $R_{DS(ON)}$, max: $0.0084\,\Omega$ ($8.4\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$

• Power Dissipation ($P_D$): 35W

• Total Gate Charge ($Q_g$): 46nC (typ.)

• Max Channel Temperature: 150°C

Common Applications

• High-current DC-DC converters

• Switching regulators and power supplies (SMPS)

• Synchronous rectification in power systems

• Motor drives and battery management systems (BMS)

Package Includes

• 1 x Toshiba TK40A10N1 N-Channel Power MOSFET (TO-220SIS)