Description
Marked "K17A80W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK17A80W, an N-channel MOSFET rated 800V with an on-resistance of 0.29Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad.

Key features include a low typical drain-source on-resistance of RDS(ON) = 0.25Ω, achieved through a super junction structure (DTMOS), easy gate switching control, and enhancement-mode operation with a gate threshold voltage of 3.0 to 4.0V (VDS = 10V, ID = 0.85mA). Testing conditions for avalanche rating use VDD = 90V, initial channel temperature of 25°C, L = 74.5mH, RG = 25Ω, with an avalanche current (IAS) of 3.4A, and the channel temperature must not exceed 150°C. As with other DTMOS-series parts, it's intended primarily for switching voltage regulator applications.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
• Manufacturer: Toshiba Semiconductor
• Package Marking: K17A80W
• Package: TO-220SIS, isolated, 3-pin (Gate, Drain, Source)
• Drain-Source Voltage (VDSS): 800V
• Continuous Drain Current (ID): 17A
• RDS(ON), typical: 0.25Ω 
• Gate Threshold Voltage (Vth): 3.0 to 4.0V
• Avalanche Current (IAS): 3.4A
• Max Channel Temperature: 150°C 
• Process: DTMOSIV (super junction structure)

Common Applications

• Switching voltage regulators
• Offline SMPS and flyback converters
• High-voltage (800V-class) power switching designs

Package Includes

• 1 x Toshiba TK17A80W N-Channel Power MOSFET (TO-220SIS)