Description

Marked "K16A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK16A60W, an N-channel MOSFET rated 600V with an on-resistance of 0.19Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad. Key features include a low typical drain-source on-resistance of RDS(ON) = 0.16Ω, achieved through a super junction structure (DTMOS), easy gate switching control, and enhancement-mode operation with a gate threshold voltage of 2.7 to 3.7V (VDS = 10V, ID = 0.79mA). Absolute maximum ratings include a gate-source voltage of ±30V, drain power dissipation of 40W, single pulse avalanche energy of 231mJ, avalanche current of 4A, and a channel temperature limit of 150°C (storage -55°C to +150°C). Commercial production of this part began in May 2012

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
• Manufacturer: Toshiba Semiconductor
• Package Marking: K16A60W
• Package: TO-220SIS, isolated, 3-pin (Gate, Drain, Source)
• Drain-Source Voltage (VDSS): 600V
• Continuous Drain Current (ID): 15.8A
• Gate-Source Voltage (VGSS): ±30V
• RDS(ON), typical: 0.16Ω 
• Gate Threshold Voltage (Vth): 2.7 to 3.7V
• Drain Power Dissipation: 40W
• Single Pulse Avalanche Energy: 231mJ
• Package Weight: ~1.7g typical

Common Applications

• Switching voltage regulators
• Offline SMPS and flyback converters
• General-purpose 600V-class power switching circuits requiring higher current handling than lower-current siblings like the TK12A60W

Package Includes

• 1 x Toshiba TK16A60W N-Channel Power MOSFET (TO-220SIS)