Description

Marked "K12A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK12A60W, an N-channel MOSFET rated 600V with an on-resistance of 0.3Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad.

Key features include a low typical drain-source on-resistance of RDS(ON) = 0.265Ω, achieved through a super junction structure (DTMOS), along with easy gate switching control and enhancement-mode operation. The gate threshold voltage is 2.7 to 3.7V (VDS = 10V, ID = 0.6mA). It's rated with a channel-to-case thermal resistance of 3.57°C/W and channel-to-ambient thermal resistance of 62.5°C/W, and weighs approximately 1.7g. As with other DTMOS-series parts, it's intended primarily for switching voltage regulator applications.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
• Manufacturer: Toshiba Semiconductor
• Package Marking: K12A60W
• Package: TO-220SIS (isolated), 3-pin (Gate, Drain, Source)
• Drain-Source Voltage (VDSS): 600V 
• Gate-Source Voltage (VGSS): 30V
• Continuous Drain Current (ID): 11.5A
• RDS(ON), typical: 0.265Ω
• Gate Threshold Voltage (Vth): 2.7 to 3.7v
• Process: DTMOSIV (super junction structure)
• Package weight: ~1.7g

Common Applications

• Switching voltage regulators 
• Offline SMPS and flyback converters
• General-purpose 600V-class power switching

Package Includes

• 1 x Toshiba TK12A60W N-Channel Power MOSFET (TO-220SIS)