SVS20N60FJD2 N Channel Super Junction Power MOSFET
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SVS20N60FJD2 N Channel Super Junction Power MOSFET

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Description

Marked "20N60FJD2" on the package with the SL logo and "D-Well™" branding, this matches Hangzhou Silan Microelectronics' SVS20N60FJD2, part of their SVS20N60FJ(K)(T)(PN)(S)(P7)D2 product family. It's an N-channel enhancement mode high-voltage power MOSFET built on Silan's super junction MOS technology, which achieves low conduction loss and switching losses. The specific "FJD2" suffix corresponds to the isolated TO-220FJ-3L package variant, with the marking code "20N60FJD2" and halogen-free construction confirmed in Silan's own ordering information table.

The "D-Well" branding on the package likely refers to a private-label or distributor rebrand of the underlying Silan die — the electrical characteristics and marking code match Silan's part exactly, so this should be treated functionally as the SVS20N60FJD2.

Key Specifications

  • Type: N-Channel Enhancement Mode Super Junction Power MOSFET
  • Manufacturer: Silan Microelectronics (rebadged as "D-Well")
  • Package Marking: 20N60FJD2
  • Package: TO-220FJ-3L, isolated, through-hole
  • Drain-Source Voltage (VDS): 600V
  • Drain Current (ID): 20A
  • Gate-Source Voltage (VGS): 30V max
  • Gate Threshold Voltage (Vgs(th)): 4V max
  • RDS(ON), max: 0.19Ω
  • Power Dissipation: 45W
  • Total Gate Charge (Qg): 39nC
  • Max Junction Temperature: 150°C
  • Compliance: Halogen-free

Common Applications

  • Switch-mode power supplies (SMPS)
  • Motor drive circuits
  • Power converters requiring 600V-class blocking voltage
  • Industrial and consumer switching applications where isolated TO-220 mounting is needed

Package Includes

  • 1 x Silan SVS20N60FJD2 ("D-Well" 20N60FJD2) N-Channel MOSFET (TO-220FJ-3L, isolated)

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