Description
Marked "104R5NT" on the package with the Silan ("SL") logo, this is Hangzhou Silan Microelectronics' SVG104R5NT, part of their LVMOS (low-voltage MOS) power MOSFET series. The SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor produced using Silan's LVMOS technology, with an improved process and cell structure especially tailored to minimize on-state resistance and provide superior switching performance. It's widely used in UPS and power management applications.

This is a high-current, low-voltage MOSFET — the low 100V rating paired with a very low RDS(ON) and a massive 120A current capability makes it well suited for high-current, low-voltage switching stages like synchronous rectification and battery-related power circuits, rather than offline/mains-voltage applications.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (LVMOS)
• Manufacturer: Hangzhou Silan Microelectronics
• Package Marking: 104R5NT
• Package: TO-220-3L, 3-pin, through-hole
• Drain-Source Voltage (VDS): 100V 
• Drain Current (ID): 120A 
• Gate-Source Voltage (VGS): 20V max 
• Gate Threshold Voltage (Vgs(th)): 4V max 
• RDS(ON), max: 0.0045Ω (4.5mΩ) 
• Power Dissipation: 208W
• Total Gate Charge (Qg): 114nC 
• Output Capacitance (Coss): 864pF 
• Max Junction Temperature: 150°C 
• Features: Improved dv/dt capability

Common Applications

• Uninterruptible Power Supplies (UPS) 
• Power management applications 
• High-current, low-voltage synchronous rectification
• Battery management and DC-DC converter switching stages

Package Includes

• 1 x Silan SVG104R5NT N-Channel Power MOSFET (TO-220-3L)