Description

The 40N60M2 is an N-channel power MOSFET manufactured by STMicroelectronics, developed using their MDmesh M2 technology. Thanks to its strip layout and improved vertical structure, the device delivers low on-resistance and optimized switching characteristics, making it well suited for the most demanding high-efficiency power converter designs.

Rated for 600V drain-source voltage and 34A continuous drain current, with a low typical on-resistance of 78mΩ, this MOSFET is built for extremely low gate charge, giving fast, efficient switching with reduced drive losses. The device is 100% avalanche tested and features Zener protection for enhanced ruggedness, along with a low gate input resistance that improves switching performance in demanding circuits.

Based on the package visible on this unit — a fully-molded, isolated body with no exposed metal tab — this is the TO-220FP (isolated) package variant of the 40N60M2 family, which simplifies heatsink mounting since no separate insulating mica pad is typically required, while still delivering solid thermal performance for high-power switching applications.

Key Specifications

• Type: N-Channel Power MOSFET (MDmesh M2 technology)
• Manufacturer: STMicroelectronics
• Package Marking: 40N60M2
• Package: TO-220FP (isolated, 3-lead)
• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 34A @ TC=25°C (22A @ TC=100°C)
• RDS(on): 78mΩ typical
• Total Power Dissipation (PTOT): 250W @ TC=25°C
• Gate-Source Voltage (VGS): ±25V max
• 100% avalanche tested, Zener-protected

Common Applications

• LLC and resonant converters
• High-efficiency switching power supplies
• Motor drives and industrial power conversion
• General high-voltage switching applications

Package Includes

• 1 x STMicroelectronics 40N60M2 N-Channel MOSFET (TO-220FP)