Description

Marked "D3NK80Z" on the package with STMicroelectronics' logo, this is STMicroelectronics' STD3NK80Z (or STU3NK80Z), an 800V N-channel SuperMESH™ Power MOSFET. Produced using ST's high-voltage SuperMESH™ technology, it features low on-resistance ($R_{DS(ON)}$), high $dv/dt$ capability, and integrated Zener diodes across the gate-source for electrostatic discharge (ESD) protection.

Housed in a IPAK (TO-251) through-hole package (or DPAK style with straight leads), it is designed for compact, high-efficiency switching circuits.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (SuperMESH™)

• Manufacturer: STMicroelectronics

• Package Marking: D3NK80Z / 0Z / 6K26HB47

• Package: TO-251 / IPAK (3-pin through-hole)

• Drain-Source Voltage ($V_{DSS}$): 800V

• Drain Current ($I_D$): 2.5A (Continuous, $T_C = 25^\circ\text{C}$)

• Pulsed Drain Current ($I_{DP}$): 10A

• Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max (ESD Protected via built-in Zener diodes)

• Gate Threshold Voltage ($V_{GS(th)}$): 3.0V to 4.5V

• $R_{DS(ON)}$, max: $4.5\,\Omega$ at $V_{GS} = 10\text{V}$

• Power Dissipation ($P_D$): 70W

• Max Junction Temperature: 150°C

Common Applications

• Switch-Mode Power Supplies (SMPS) for small offline adapters

• Auxiliary power supply stages

• High-voltage, low-power switching circuits

• Electronic ballasts for lighting

Package Includes

• 1 x STMicroelectronics STD3NK80Z 800V 2.5A N-Channel Power MOSFET (TO-251 / IPAK)