The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.

Key Specifications:

• Collector-Emitter Voltage (V_CES): 750V
• Collector Current (I_C): 160A
• Package Type: TO-247 Plus

For detailed information, refer to the BGM160T75SD datasheet.