Description
The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.
Key Specifications:
- Collector-Emitter Voltage (V<sub>CES</sub>): 750V
- Collector Current (I<sub>C</sub>): 160A
- Package Type: TO-247 Plus
For detailed information, refer to the BGM160T75SD datasheet.
160A, 750V, BGM160T75SD, BYD160T75SD, Circuit Board, IGBT, Pullout, solar inverter, Solar Inverter Circuit Board, Solar Inverter Parts, Solar Inverter Spare Parts
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