Description

The PRM8R0N10CTF is an N-channel power MOSFET manufactured by PFC Device Inc., built using their shielded-gate trench (SGT) MOSFET technology, which is designed to generate low gate charge and RDS(on) to minimize conduction losses and optimize efficiency across various power topologies. It's part of PFC Device's 100V MOSFET series, following the same "RDS(on)-in-the-part-number" naming convention used across their lineup (e.g., their PRM010N10CT/PRM010N10CTF, also a 100V single N-Channel MOSFET) — in this case, the "8R0" designation indicates an on-resistance of roughly 8.0mΩ.

It's housed in the isolated TO-220F package (fully-molded body, no exposed metal tab), which simplifies heatsink mounting since no separate insulating mica pad is required, while still offering solid thermal dissipation for demanding switching applications.

With a low RDS(on) and 100V rating, this MOSFET is well suited for high-current, low-voltage switching applications such as DC-DC converters, battery protection circuits, synchronous rectification, and general-purpose power switching where efficiency and low conduction loss matter.

Key Specifications

• Type: N-Channel Power MOSFET (Shielded-Gate Trench)
• Manufacturer: PFC Device Inc.
• Package Marking: PFC PRM 8R0N10CTF
• Package: TO-220F (isolated, 3-lead)
• Drain-Source Voltage (VDS): 100V
• RDS(on): ~8.0mΩ (approx., based on part number convention)

Common Applications

• DC-DC converters and power supplies
• Battery protection / charge-discharge switching
• Synchronous rectification
• General-purpose high-current, low-voltage switching

Package Includes

• 1 x PFC PRM8R0N10CTF N-Channel MOSFET (TO-220F)