Description:
The PD020065EP_G is a Silicon Carbide (SiC) Schottky barrier diode rated for 650V and 20A, packaged in a 2-lead TO-220-2 through-hole outline with a metal mounting tab for heatsinking. As a wide-bandgap SiC device, it offers substantial performance advantages over conventional silicon rectifiers — most notably, near-zero reverse recovery charge, which dramatically reduces switching losses in high-frequency circuits.

Because of its temperature-independent switching behavior and negligible reverse recovery, this diode is particularly well suited to power factor correction (PFC) stages, boost converters, and other hard-switching power topologies where a standard silicon diode would introduce significant losses and heat. Its high forward surge current capability and stable performance at elevated junction temperatures (up to 175°C) make it a reliable choice for demanding power electronics designs.

The TO-220-2 package is a compact, non-isolated through-hole outline with a metal tab for direct heatsink mounting, ideal for moderate-to-high power applications where efficient thermal management is required.

Key Specifications:

• Type: Silicon Carbide (SiC) Schottky Barrier Diode
• Device Marking: PD020065EP_G
• Reverse Voltage (VRRM): 650V
• Forward Current (IF): 20A
• Reverse Recovery Charge: Near-zero (negligible Qrr)
• Max Junction Temperature: 175°C
• Package Type: TO-220-2 (2-Pin, Through Hole, Non-Isolated Tab)

Applications:
Power factor correction (PFC), boost/DC-DC converters, switch-mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and industrial motor drives.

Package Includes:

• 1 x PD020065EP_G SiC Schottky Diode (TO-220-2)