Description:
The NCE65T180F is an N-Channel Super Junction Power MOSFET manufactured by NCE Power Semiconductor, built using advanced trench-gate super junction technology. This design delivers excellent low on-resistance and low conduction losses, along with an ultra-low gate charge that reduces driving requirements and improves overall switching performance.

Rated at 650V, this MOSFET is engineered to meet the demanding needs of AC-DC switch-mode power supplies (SMPS), making it well-suited for power factor correction (PFC), AC/DC power conversion, and general industrial power applications. It is 100% avalanche tested for ruggedness and is fully RoHS compliant.

The device is housed in a TO-220F (fully insulated) package, which allows direct mounting to a heatsink without requiring a separate insulating pad — a practical advantage in compact, high-density power supply designs.

Key Specifications:

• Manufacturer: NCE Power Semiconductor
• Part Number: NCE65T180F
• Type: N-Channel Super Junction MOSFET
• Drain-Source Voltage (VDS): 650V
• RDS(ON) Max: 180 mΩ
• Drain Current (ID): 21A
• Package Type: TO-220F (Isolated, 3-Pin, Through Hole)
• Certification: RoHS Compliant, 100% Avalanche Tested

Applications:
Power factor correction (PFC), switch-mode power supplies (SMPS), AC/DC power conversion, and industrial power electronics.

Package Includes:

• 1 x NCE Power NCE65T180F N-Channel MOSFET (TO-220F)