NCE 80TD65 IGBT MOSFET Power Semiconductor
Description
NCE 80TD65: A Powerful and Versatile Solution
The NCE 80TD65 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the NCE 80TD65 is an ideal choice for a wide range of applications, including:
- Motor control
- Power supplies
- Inverters
- Solar power systems
- Uninterruptible power supplies (UPS)
Key Benefits of the NCE 80TD65 MOSFET
- Fast switching speed for efficient power conversion
- High current capacity to handle demanding loads
- Low on-state voltage for reduced power losses
- Rugged construction for reliability and durability
- Wide operating temperature range for versatile applications
Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (VDS(max)) | 800 V |
| Drain Current (ID) | 65 A |
| On-Resistance (RDS(on)) | 0.18 Ω (type) |
| Input Capacitance (Ciss) | 1500 pF |
| Junction Temperature (Tj) | -40°C to +150°C |
Package Includes
- 1 x G60N100 IGBT
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