Description
Marked "800R450" with a triangular logo containing an "M" and "PDG" beneath it, this matches MagnaChip's MMF80R450P family of super junction MOSFETs, which use the "80R450" style marking convention (800V, RDS(ON) ≈ 0.45Ω) that MagnaChip datasheets confirm directly. The MMF(U)80R450P is a power MOSFET using MagnaChip's advanced super junction technology that achieves very low on-resistance and gate charge, providing much higher efficiency through optimized charge coupling technology. These user-friendly devices offer designers the advantage of low EMI as well as low switching loss. Features include low power loss through high-speed switching and low on-resistance, 100% avalanche testing, and a green package with Pb-free plating and halogen-free construction.

Key Specifications (per MagnaChip MMF80R450P/PB family datasheet)

• Type: N-Channel Enhancement Mode Super Junction Power MOSFET
• Manufacturer: MagnaChip Semiconductor
• Package Marking: 800R450 (variant of standard "80R450" marking convention)
• Package: TO-220F, isolated, 3-pin, through-hole
• Drain-Source Voltage (VDSS): 800V (min) 
• Drain Current (ID): 11A @ TC=25°C 
• RDS(ON): 0.45Ω max @ VGS=10V
• Max VDS @ Tj: 850V 
• Compliance: Pb-free, halogen-free (green package) 

Common Applications

• Motor drive circuits
• DC-DC converters 
• Power switch applications 
• Offline SMPS and high-voltage switching designs

Package Includes

• 1 x MagnaChip MMF80R450P N-Channel Super Junction MOSFET (TO-220F)