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MGW20N60D IGBT Power Transistor - a black three-pin electronic component shown with its corresponding circuit diagram labeled with G, C, and E terminals.
MGW20N60D IGBT Power Transistor - shown as two black three-pin electronic components, one displaying its metal heat sink side and one its plastic side.
MGW20N60D IGBT Power Transistor - a black three-pin electronic component shown with its corresponding circuit diagram labeled with G, C, and E terminals.
MGW20N60D IGBT Power Transistor - shown as two black three-pin electronic components, one displaying its metal heat sink side and one its plastic side.

MGW20N60D IGBT Power Transistor

Sale price Rs 560
SKU: b731,L5,Th3,KRT
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Pickup available at Digilog Electronics

Usually ready in 2 hours

MGW20N60D IGBT Power Transistor - a black three-pin electronic component shown with its corresponding circuit diagram labeled with G, C, and E terminals.

MGW20N60D IGBT Power Transistor

  • Digilog Electronics

    Pickup available, usually ready in 2 hours

    🏢 Digilog Electronics 13th the RegalStreet,
    Back side of KFC, Near Abubakar Masjid Mall Road
    Lahore
    Pakistan

    +923124002221

    Check this on google map
MGW20N60D IGBT Power Transistor - a black three-pin electronic component shown with its corresponding circuit diagram labeled with G, C, and E terminals.
MGW20N60D IGBT Power Transistor
Sale priceRs 560

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBT’s save space, reduce assembly time and cost.

Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:

  • Type Designator: MGW20N60D
  • Type of IGBT Channel: N-Channel
  • Maximum Power Dissipation (Pc), W: 142W
  • Maximum Collector-Emitter Voltage |Vce|, V: 600V
  • Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V
  • Maximum Gate-Emitter Voltage |Veg|, V: 20V
  • Maximum Collector Current |Ic|, A: 20A
  • Maximum Junction Temperature (Tj), °C: 150
  • Rise Time, nS: 59
  • Maximum Collector Capacity (Cc), pF: 2280pF
  • High Short Circuit Capability
  • Soft Recovery Free Wheeling Diode is included in the package

MGW20N60D DataSheet

Package Include:

  • 1 x MGW20N60D IGBT IC

Best online shopping website for MGW20N60D IGBT Power MOSFET Transistor  insulated gate bipolar transistor in a cheap price in Lahore Islamabad Karachi Faislabad Multan Quetta Sukkur Peshawar Rawalpindi Gujranwala and all over Pakistan

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