Description

The 60R360Q is a 600V N-channel power MOSFET manufactured by MagnaChip Semiconductor, built using their advanced super junction technology to achieve very low on-resistance and low gate charge. This design provides much higher efficiency by using optimized charge coupling technology, resulting in low power loss through high-speed switching combined with a low on-resistance.

Rated for 600V drain-source voltage and featuring an on-resistance of 0.36Ω, this MOSFET is 100% avalanche tested, ensuring minimal lot-to-lot variation for robust, reliable device performance. It's built in a "Green," lead-free, halogen-free package for environmentally compliant manufacturing.

Housed in the isolated TO-220F package (fully-molded body), it simplifies heatsink mounting since no separate insulating mica pad is typically required, while still providing solid thermal performance. Its combination of high voltage rating and efficient switching makes it well suited for power factor correction stages, switching power supplies, adapters, motor control, and DC-DC converter circuits.

Key Specifications

• Type: N-Channel Power MOSFET (Super Junction)
• Manufacturer: MagnaChip Semiconductor
• Package Marking: 60R360Q
• Package: TO-220F (isolated, 3-lead)
• Drain-Source Voltage (VDSS): 600V (min)
• Static Drain-Source On-Resistance (RDS(on)): 0.36Ω max @ VGS = 10V
• Continuous Drain Current (ID): ~11A @ TC=25°C
• 100% avalanche tested
• RoHS compliant, lead-free, halogen-free "Green" package

Common Applications

• Power factor correction (PFC) stages
• Switching power supplies and adapters
• Motor control circuits
• DC-DC converters

Package Includes

• 1 x MagnaChip 60R360Q N-Channel MOSFET (TO-220F)