Description
Marked "045N10N" on the package with Infineon's logo, this is Infineon's IPP045N10N3G (also available as IPB045N10N3G/IPI045N10N3G variants), part of their OptiMOS3 power transistor family. It's an N-channel MOSFET built for low-voltage, high-current switching applications, featuring an excellent gate charge × RDS(ON) product (figure of merit), very low on-resistance, a 175°C maximum operating temperature, and Pb-free/RoHS-compliant lead plating.

The OptiMOS3 process is optimized to minimize conduction and switching losses simultaneously, making this part well suited for high-efficiency, high-current DC-DC conversion and synchronous rectification applications where both low RDS(ON) and fast switching are needed.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (OptiMOS3)
• Manufacturer: Infineon Technologies
• Package Marking: 045N10N
• Package: TO-220, 3-pin, through-hole
• Drain-Source Voltage (VDS): 100V
• Drain Current (ID): 100A
• Gate-Source Voltage (VGS): 20V max
• Gate Threshold Voltage (VGS(th)): 3.5V max
• RDS(ON), max: 0.0045Ω (4.5mΩ)
• Power Dissipation: 214W
• Total Gate Charge (Qg): 88nC
• Output Capacitance (Coss): 1210pF
• Max Junction Temperature: 175°C

Common Applications

• High-current, low-voltage DC-DC converters
• Synchronous rectification
• Battery-powered and high-efficiency switching power supplies
• Motor drive circuits requiring low conduction loss

Package Includes

• 1 x Infineon IPP045N10N3G N-Channel Power MOSFET (TO-220)