Igbt P75v120fdb2
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Igbt P75v120fdb2
The is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses.
Key Specifications:
- Collector-Emitter Voltage (V<sub>CES</sub>): 1200V
- Collector Current (I<sub>C</sub>): 75A
- Package Type: TO-247PLUS
For detailed information, refer to the p75v120fdb2 datasheet.