HY1920 MOSFET New N-channel Power Transistor
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HY1920 MOSFET New N-channel Power Transistor
HY1920 MOSFET - High-Performance N-Channel Power Transistor
The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage and 90A current handling, making it suitable for motor control, power supplies, and industrial switching applications.
Key Features
- Drain-to-Source Voltage (VDS): 200V
- Continuous Drain Current (ID): 90A
- Maximum Power Dissipation: 375W
- Low RDS(on) for efficient switching
Learn More About HY1920 MOSFET
Explore detailed specifications and datasheets for the HY1920 MOSFET on the following site:
Related Product: MOSFET Transistor
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Package Includes
- 1 x HY1920 N-Channel MOSFET
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