Description
The HCS80R380S is an 800V N-channel super junction power MOSFET, engineered for high-efficiency power conversion applications. Housed in the isolated TO-220FS through-hole package, it's designed to efficiently switch or amplify electronic signals in demanding, high-voltage power circuits.
This MOSFET features a very low figure of merit (FOM = RDS(on) × Qg), delivering extremely low switching loss combined with excellent stability and uniformity across production units. With a breakdown voltage of up to 850V (BVDSS @ Tj,max), a maximum RDS(on) of 0.38Ω, a continuous drain current of 13A, and a typical gate charge of just 29nC, it's built for both efficient conduction and fast, low-loss switching. The device is 100% avalanche tested and includes a built-in ESD protection diode for enhanced reliability in real-world operating conditions.
Its super junction structure and isolated TO-220FS package make it a strong fit for high-voltage switching applications requiring good thermal performance without a separate insulating mica pad — commonly used across switch-mode power supplies, UPS systems, and power factor correction circuits.
Key Specifications
- Type: N-Channel Super Junction Power MOSFET
- Package Marking: HCS80R380S
- Package: TO-220FS (isolated, 3-lead)
- Breakdown Voltage (BVDSS @ Tj,max): 850V
- Continuous Drain Current (ID): 13A
- RDS(on), max: 0.38Ω
- Gate Charge (Qg), typ: 29nC
- 100% avalanche tested
- Built-in ESD protection diode
- Very low FOM (RDS(on) × Qg) for reduced switching loss
Common Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) circuits
- TV power supplies and LED lighting power
- AC-DC converters
Package Includes
- 1 x HCS80R380S N-Channel Super Junction MOSFET (TO-220FS)