Description

The HCS80R380S is an 800V N-channel super junction power MOSFET, engineered for high-efficiency power conversion applications. Housed in the isolated TO-220FS through-hole package, it's designed to efficiently switch or amplify electronic signals in demanding, high-voltage power circuits.

This MOSFET features a very low figure of merit (FOM = RDS(on) × Qg), delivering extremely low switching loss combined with excellent stability and uniformity across production units. With a breakdown voltage of up to 850V (BVDSS @ Tj,max), a maximum RDS(on) of 0.38Ω, a continuous drain current of 13A, and a typical gate charge of just 29nC, it's built for both efficient conduction and fast, low-loss switching. The device is 100% avalanche tested and includes a built-in ESD protection diode for enhanced reliability in real-world operating conditions.

Its super junction structure and isolated TO-220FS package make it a strong fit for high-voltage switching applications requiring good thermal performance without a separate insulating mica pad — commonly used across switch-mode power supplies, UPS systems, and power factor correction circuits.

Key Specifications

• Type: N-Channel Super Junction Power MOSFET
• Package Marking: HCS80R380S
• Package: TO-220FS (isolated, 3-lead)
• Breakdown Voltage (BVDSS @ Tj,max): 850V
• Continuous Drain Current (ID): 13A
• RDS(on), max: 0.38Ω
• Gate Charge (Qg), typ: 29nC
• 100% avalanche tested
• Built-in ESD protection diode
• Very low FOM (RDS(on) × Qg) for reduced switching loss

Common Applications

• Switch-Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• TV power supplies and LED lighting power
• AC-DC converters

Package Includes

• 1 x HCS80R380S N-Channel Super Junction MOSFET (TO-220FS)