Description

Marked "HCS70R360S" on the package, this is Huacan Semiconductor's HCS70R360S, part of their 700V Super Junction power MOSFET family. It is an N-channel enhancement mode power transistor engineered using advanced super junction technology to achieve low on-resistance ($R_{DS(ON)}$) and optimized gate charge ($Q_g$) performance.

It is housed in an isolated TO-220F package, which provides electrical isolation for easy heat-sink mounting and thermal management in high-voltage, high-efficiency power converters.

Key Specifications

• Type: N-Channel Enhancement Mode Super Junction Power MOSFET

• Manufacturer: Huacan Semiconductor

• Package Marking: HCS70R360S

• Package: TO-220F (Isolated 3-pin through-hole)

• Drain-Source Voltage ($V_{DSS}$): 700V

• Drain Current ($I_D$): 11A (Continuous, $T_C = 25^\circ\text{C}$)

• Pulsed Drain Current ($I_{DP}$): 33A

• Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max

• Gate Threshold Voltage ($V_{GS(th)}$): 2.5V to 4.5V

• $R_{DS(ON)}$, max: $0.360\,\Omega$ ($360\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$

• Power Dissipation ($P_D$): 31W

• Max Junction Temperature: 150°C

Common Applications

• Switch-Mode Power Supplies (SMPS)

• Power Factor Correction (PFC) stages

• LED lighting drivers and ballast power supplies

• Auxiliary power supplies for industrial equipment and consumer electronics

Package Includes

• 1 x Huacan Semiconductor HCS70R360S N-Channel Power MOSFET (TO-220F)