Description

The FQPF8N80C is an N-channel enhancement-mode power MOSFET, manufactured by Fairchild Semiconductor (now part of onsemi) using their proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance while providing superior switching performance and high avalanche energy strength, making it well suited for high-efficiency switch-mode power supplies and other high-voltage switching applications.

Rated for 800V and 8.0A, with a maximum on-resistance of RDS(on) = 1.55Ω at VGS = 10V (ID = 4.0A), this MOSFET offers a low typical gate charge of 35nC and a low reverse transfer capacitance (Crss) of just 13pF — both contributing to fast, efficient switching with reduced drive losses. It's 100% avalanche tested, ensuring reliable performance even under demanding switching and commutation conditions.

Housed in the isolated TO-220F package (fully-molded body), it simplifies heatsink mounting since no separate insulating mica pad is typically required, while still providing solid thermal performance for high-voltage power circuits.

Key Specifications

• Type: N-Channel Enhancement-Mode Power MOSFET
• Manufacturer: Fairchild Semiconductor
• Package Marking: 1K50AN / FQPF 8N80C
• Package: TO-220F (isolated, 3-lead)
• Drain-Source Voltage (VDSS): 800V
• Continuous Drain Current (ID): 8.0A
• RDS(on): 1.55Ω max @ VGS = 10V, ID = 4.0A
• Gate Charge (Qg), typ: 35nC
• Reverse Transfer Capacitance (Crss), typ: 13pF
• 100% avalanche tested

Common Applications

• Switch-mode power supplies (SMPS)
• Electronic ballasts
• High-voltage switching circuits
• Active power factor correction (PFC)

Package Includes

• 1 x Fairchild FQPF8N80C N-Channel MOSFET (TO-220F)