Description

The 60R190Q (marked on-package as 60R190QS) is a 600V N-channel power MOSFET manufactured by MagnaChip Semiconductor, built using their advanced super junction technology to achieve very low on-resistance and low gate charge. This design delivers much higher efficiency compared to standard planar MOSFETs, thanks to optimized charge coupling technology that reduces switching losses.

Rated for a 600V drain-source voltage and featuring a low 0.19Ω on-resistance, this MOSFET is well suited for high-voltage switching applications where efficiency and reliability matter. It delivers low power loss through high-speed switching combined with its low RDS(on), and is 100% avalanche tested for robust, reliable operation across production lots. The device is built in an environmentally friendly, RoHS-compliant, halogen-free package.

Housed in the isolated TO-220F package (fully-molded body), it simplifies heatsink mounting since no separate insulating mica pad is typically required, while still providing solid thermal performance for demanding power applications like PFC circuits and switching converters.

Key Specifications

• Type: N-Channel Power MOSFET (Super Junction)
• Manufacturer: MagnaChip Semiconductor
• Package Marking: 60R190QS
• Package: TO-220F (isolated, 3-lead)
• Drain-Source Voltage (VDSS): 600V
• Static Drain-Source On-Resistance (RDS(on)): 0.19Ω max @ VGS = 10V
• Continuous Drain Current (ID): ~20A @ TC=25°C
• Operating Junction Temperature: up to 150°C
• Storage Temperature: -55°C to +150°C
• 100% avalanche tested, low EMI design
• RoHS compliant, halogen-free

Common Applications

• PFC (Power Factor Correction) power supply stages
• Switching power supplies and adapters
• Motor control circuits
• DC-DC converters
• General high-voltage switching applications

Package Includes

• 1 x 60R190Q N-Channel MOSFET (TO-220F)