📘 H11A1 Optocoupler – Technical Data (DIP-6)

🔹 Description

The H11A1 is a phototransistor optocoupler.
It contains an infrared emitting diode (LED) and a silicon NPN phototransistor in a 6-pin DIP package.
It provides electrical isolation between the input and output.

🔹 Pin Configuration (DIP-6)

1 → Anode (LED +)
2 → Cathode (LED –)
3 → No Connection
4 → Emitter (Transistor –)
5 → Collector (Transistor +)
6 → Base (optional transistor base pin, usually left unconnected)

🔹 Absolute Maximum Ratings

• Forward current (LED): 60 mA max

• Reverse voltage (LED): 6 V

• Collector-emitter voltage: 30 V max

• Collector current: 50 mA max

• Collector power dissipation: 150 mW max

• Isolation voltage: 5300 VRMS

🔹 Electrical Characteristics (Typical Values)

• Forward voltage of LED: 1.2V – 1.5V @ IF = 10 mA

• Collector-emitter saturation voltage: 0.4V @ IC = 2 mA

• Current Transfer Ratio (CTR): 50% to 600% (depending on binning)

• Isolation resistance: >10¹¹ Ω

• Coupling capacitance: <0.5 pF

• Switching speed: 2 µs to 18 µs

🔹 Features

• High dielectric isolation between input and output

• TTL, CMOS, and logic compatible

• Low coupling capacitance

• Wide operating temperature range (–55°C to +100°C)

• Base pin available for sensitivity adjustment

🔹 Applications

• Logic signal isolation

• Microcontroller I/O protection

• Switch Mode Power Supply (SMPS) feedback

• Telephone ring detection

• Relay driver circuits

• General purpose signal isolation

🔹 Typical Application Circuit

Input Side (LED drive):

Output Side (Phototransistor):

• Base (Pin 6) → left open

• When LED is ON → transistor conducts → output LOW

• When LED is OFF → transistor cuts off → output HIGH

🔹 Internal Structure (Simplified)

• Left side: Infrared LED

• Right side: Phototransistor (NPN)

• Separated by optical gap (no electrical contact, only light coupling)