Description
The HH75n120HA is a high-speed switching third-generation Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Its key specifications include:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 150 A (25°C), 75 A (134°C) |
| Pulsed Collector Current (ICpuls) | 300 A |
| Gate-Emitter Voltage (VGE) | ±20 V (continuous), ±30 V (transient) |
| Power Dissipation (Ptot) | 938 W (25°C), 256 W (134°C) |
| Operating Junction Temperature (Tvj) | -40°C to +175°C |
- Collector-Emitter Voltage (V<sub>CES</sub>): 1200 V
-
Continuous Collector Current (I<sub>C</sub>):
- 150 A at T<sub>C</sub> = 25°C
- 75 A at T<sub>C</sub> = 134°C
- Pulsed Collector Current (I<sub>Cpuls</sub>): 300 A
-
Gate-Emitter Voltage (V<sub>GE</sub>):
- ±20 V (continuous)
- ±30 V (transient, ≤10 µs, D < 0.010)
- Short Circuit Withstand Time (t<sub>SC</sub>): 10 µs at V<sub>GE</sub> = 15 V, V<sub>CC</sub> ≤ 600 V, T<sub>vj</sub> = 175°C
-
Power Dissipation (P<sub>tot</sub>):
- 938 W at T<sub>C</sub> = 25°C
- 256 W at T<sub>C</sub> = 134°C
- Operating Junction Temperature (T<sub>vj</sub>): -40°C to +175°C
-
Thermal Resistance Junction-to-Case (R<sub>th(j-c)</sub>):
- IGBT: 0.16 K/W
- Diode: 0.28 K/W
-
Collector-Emitter Saturation Voltage (V<sub>CEsat</sub>):
- 2.00 V (typical) at T<sub>vj</sub> = 25°C, I<sub>C</sub> = 75 A
- 2.50 V (typical) at T<sub>vj</sub> = 175°C, I<sub>C</sub> = 75 A
- Gate-Emitter Threshold Voltage (V<sub>GE(th)</sub>): 5.8 V (typical) at I<sub>C</sub> = 2.6 mA, V<sub>CE</sub> = V<sub>GE</sub>
-
Switching Characteristics at T<sub>vj</sub> = 25°C:
- Turn-On Delay Time (t<sub>d(on)</sub>): 38 ns
- Rise Time (t<sub>r</sub>): 32 ns
- Turn-Off Delay Time (t<sub>d(off)</sub>): 303 ns
- Fall Time (t<sub>f</sub>): 32 ns
- Total Switching Energy (E<sub>ts</sub>): 6.30 mJ
-
Switching Characteristics at T<sub>vj</sub> = 175°C:
- Turn-On Delay Time (t<sub>d(on)</sub>): 38 ns
- Rise Time (t<sub>r</sub>): 35 ns
- Turn-Off Delay Time (t<sub>d(off)</sub>): 400 ns
- Fall Time (t<sub>f</sub>): 68 ns
- Total Switching Energy (E<sub>ts</sub>): 12.10 mJ
1200V IGBT, 150A IGBT, 300A pulsed current, 75AIGBTforindustrialuse, 75n1200, 938W power dissipation, BestIGBTforACmotors, DC-AC converter IGBT, energy-efficient transistor, EnergyefficientIGBT, HH75n120HA, high power transistor, high voltage IGBT, high voltage transistor, high-speed switching, HighpowerswitchingIGBT, igbt, IGBT for inverters, IGBT module, IGBTforinductionheating, industrial IGBT, IndustrialIGBTsupplier, infineon, InfineonK75T60IGBT, insulated gate bipolar transistor, MOSFET IGBT, motor control IGBT, Pakistan electronics market, power electronics, power semiconductor, power supply module, switching device
Product Of The Year:
