{"product_id":"utc-7nm70g-n-channel-super-junction-power-mosfet","title":"UTC 7NM70G N Channel Super Junction Power MOSFET","description":"\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eDescription\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul dir=\"ltr\"\u003e\n\u003cli\u003e\n\u003cstrong\u003eMarking on Device:\u003c\/strong\u003e UTC, 7NM70G, 01 SMCU\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e UTC (Unisonic Technologies Co., Ltd.)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDevice Type:\u003c\/strong\u003e N-Channel Super Junction Power MOSFET\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage:\u003c\/strong\u003e TO-252 (DPAK), Surface Mount\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePin Configuration (left to right, as marked on body):\u003c\/strong\u003e\n\u003cdiv dir=\"ltr\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth scope=\"col\"\u003ePin\u003c\/th\u003e\n\u003cth scope=\"col\"\u003eFunction\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003eGate (G)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e2\u003c\/td\u003e\n\u003ctd\u003eDrain (D)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003eSource (S)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e(Note: Tab\/mounting pad is internally connected to Drain)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/div\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eWhat This Component Does\u003c\/strong\u003e\u003cbr\u003eThis is a Super Junction structured N-channel power MOSFET, used as an electronic switch to control current flow in a circuit using a small gate-controlled signal. Compared to standard planar MOSFETs, the super junction design allows for lower on-state resistance and faster switching, making it well-suited for high-frequency switching duty in power conversion circuits like DC-DC and AC-DC converters.\u003c\/p\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eCore Electrical Ratings\u003c\/strong\u003e\u003c\/p\u003e\n\u003cdiv dir=\"ltr\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth scope=\"col\"\u003eParameter\u003c\/th\u003e\n\u003cth scope=\"col\"\u003eSymbol\u003c\/th\u003e\n\u003cth scope=\"col\"\u003eRating\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVDSS\u003c\/td\u003e\n\u003ctd\u003e700V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVGSS\u003c\/td\u003e\n\u003ctd\u003e±30V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e7A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-State Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e\u0026lt;1.0Ω @ VGS=10V, ID=3.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(th)\u003c\/td\u003e\n\u003ctd\u003e~4.5V (typical)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePower Dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e~57–60W (TO-252\/TO-251)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Charge\u003c\/td\u003e\n\u003ctd\u003eQg\u003c\/td\u003e\n\u003ctd\u003e~19nC @ 10V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eInput Capacitance\u003c\/td\u003e\n\u003ctd\u003eCiss\u003c\/td\u003e\n\u003ctd\u003e~400pF\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOutput Capacitance\u003c\/td\u003e\n\u003ctd\u003eCoss\u003c\/td\u003e\n\u003ctd\u003e~223pF\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction Temp\u003c\/td\u003e\n\u003ctd\u003eTJ\u003c\/td\u003e\n\u003ctd\u003e-55°C to +150°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/div\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eImportant Usage Notes (for support\/troubleshooting reference)\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul dir=\"ltr\"\u003e\n\u003cli\u003e\n\u003cstrong\u003eHigh voltage rating, moderate current:\u003c\/strong\u003e At 700V\/7A, this MOSFET is designed for offline (mains-referenced) power supplies rather than low-voltage logic-level switching applications. It is not a logic-level MOSFET — a proper gate driver capable of reaching ~10V VGS is needed to fully turn it on with low RDS(on).\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSurface mount thermal considerations:\u003c\/strong\u003e In the TO-252 (DPAK) package, the exposed metal tab (and top-side heat tab) is the primary heat dissipation path and is internally connected to the Drain. Adequate PCB copper pour is essential to achieve rated power dissipation — undersized copper area is a common cause of premature thermal failure in SMD MOSFET applications.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eESD sensitive:\u003c\/strong\u003e As with all MOSFETs, the gate is susceptible to electrostatic discharge damage. Standard ESD handling precautions should be used during replacement or rework.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eAvalanche rated:\u003c\/strong\u003e This device includes specified avalanche energy characteristics, meaning it has some built-in tolerance to voltage transients beyond VDSS for brief moments — however, this should not be relied upon as a substitute for proper snubber\/clamping circuit design in the end application.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eVerify orientation before replacement:\u003c\/strong\u003e Since Gate, Drain, and Source pin order can vary between manufacturers\/packages even for similar part numbers, always confirm the pinout against the datasheet before soldering a replacement.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eTypical Applications\u003c\/strong\u003e\u003cbr\u003eHigh-efficiency switch-mode power supplies (SMPS), PWM motor control, AC-to-DC converters, bridge circuits, and general high-voltage switching applications requiring fast switching and low conduction loss.\u003c\/p\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003eWhen to Replace This Component\u003c\/strong\u003e\u003cbr\u003eFailure is typically caused by: exceeding the 700V VDSS rating (voltage spikes from inductive loads without proper snubbing), gate-source overvoltage beyond ±30V, excessive drain current beyond 7A, or insufficient PCB thermal dissipation leading to junction overheating. A failed MOSFET commonly tests as a dead short between Drain and Source when checked with a multimeter, or fails to switch on\/off at all.\u003c\/p\u003e\n\u003cp dir=\"ltr\"\u003e\u003cstrong\u003ePackage Includes:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul dir=\"ltr\"\u003e\n\u003cli\u003e1 x UTC 7NM70G N-Channel Power MOSFET\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"digilog.pk","offers":[{"title":"Default Title","offer_id":51851668062486,"sku":"b513","price":20.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0744\/0764\/1366\/files\/UTC7NM70GNChannelSuperJunctionPowerMOSFET.jpg?v=1789027201","url":"https:\/\/digilog.pk\/products\/utc-7nm70g-n-channel-super-junction-power-mosfet","provider":"digilog.pk","version":"1.0","type":"link"}