Description
- Marking on Device: UTC, 7NM70G, 01 SMCU
- Manufacturer: UTC (Unisonic Technologies Co., Ltd.)
- Device Type: N-Channel Super Junction Power MOSFET
- Package: TO-252 (DPAK), Surface Mount
- Pin Configuration (left to right, as marked on body):
Pin Function 1 Gate (G) 2 Drain (D) 3 Source (S) (Note: Tab/mounting pad is internally connected to Drain)
What This Component Does
This is a Super Junction structured N-channel power MOSFET, used as an electronic switch to control current flow in a circuit using a small gate-controlled signal. Compared to standard planar MOSFETs, the super junction design allows for lower on-state resistance and faster switching, making it well-suited for high-frequency switching duty in power conversion circuits like DC-DC and AC-DC converters.
Core Electrical Ratings
| Parameter | Symbol | Rating |
|---|---|---|
| Drain-Source Voltage | VDSS | 700V |
| Gate-Source Voltage | VGSS | ±30V |
| Continuous Drain Current | ID | 7A |
| On-State Resistance | RDS(on) | <1.0Ω @ VGS=10V, ID=3.5A |
| Gate Threshold Voltage | VGS(th) | ~4.5V (typical) |
| Power Dissipation | PD | ~57–60W (TO-252/TO-251) |
| Gate Charge | Qg | ~19nC @ 10V |
| Input Capacitance | Ciss | ~400pF |
| Output Capacitance | Coss | ~223pF |
| Operating Junction Temp | TJ | -55°C to +150°C |
Important Usage Notes (for support/troubleshooting reference)
- High voltage rating, moderate current: At 700V/7A, this MOSFET is designed for offline (mains-referenced) power supplies rather than low-voltage logic-level switching applications. It is not a logic-level MOSFET — a proper gate driver capable of reaching ~10V VGS is needed to fully turn it on with low RDS(on).
- Surface mount thermal considerations: In the TO-252 (DPAK) package, the exposed metal tab (and top-side heat tab) is the primary heat dissipation path and is internally connected to the Drain. Adequate PCB copper pour is essential to achieve rated power dissipation — undersized copper area is a common cause of premature thermal failure in SMD MOSFET applications.
- ESD sensitive: As with all MOSFETs, the gate is susceptible to electrostatic discharge damage. Standard ESD handling precautions should be used during replacement or rework.
- Avalanche rated: This device includes specified avalanche energy characteristics, meaning it has some built-in tolerance to voltage transients beyond VDSS for brief moments — however, this should not be relied upon as a substitute for proper snubber/clamping circuit design in the end application.
- Verify orientation before replacement: Since Gate, Drain, and Source pin order can vary between manufacturers/packages even for similar part numbers, always confirm the pinout against the datasheet before soldering a replacement.
Typical Applications
High-efficiency switch-mode power supplies (SMPS), PWM motor control, AC-to-DC converters, bridge circuits, and general high-voltage switching applications requiring fast switching and low conduction loss.
When to Replace This Component
Failure is typically caused by: exceeding the 700V VDSS rating (voltage spikes from inductive loads without proper snubbing), gate-source overvoltage beyond ±30V, excessive drain current beyond 7A, or insufficient PCB thermal dissipation leading to junction overheating. A failed MOSFET commonly tests as a dead short between Drain and Source when checked with a multimeter, or fails to switch on/off at all.
Package Includes:
- 1 x UTC 7NM70G N-Channel Power MOSFET