Power your applications with the GT60M324 60M324 IGBT. This high-performance power transistor offers exceptional performance and reliability for various electronic circuits.
Key Features:
- High-speed switching: Typical fall time of 0.11µs
- Fast recovery diode (FRD)
- Low saturation voltage
- High junction temperature (175°C)
- Wide operating voltage range (900V)
- High current capability (60A)
Specifications:
- Collector-emitter voltage (VCES): 900V
- Gate-emitter voltage (VGES): ±25V
- DC collector current (IC): 60A
- Pulse collector current (ICP): 120A
- DC diode forward current (IF): 15A
- Pulse diode forward current (IFP): 120A
- Collector power dissipation (PC): 254W
- Junction temperature (Tj): 175°C
- Storage temperature range (Tstg): -40 to 175°C
Applications:
- Power converters
- Motor drives
- Inverters
- Switching power supplies
- Other high-power electronic circuits