The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers superior efficiency in hard-switching environments such as solar inverters, high-frequency converters, motor drives, and UPS systems. The tight parameter distribution and positive saturation voltage temperature coefficient make it optimal for demanding, parallel-operated systems. Its TO‑247 long-lead package provides robust thermal handling and easy heatsink integration
Key Specifications
| Parameter | Value |
|---|---|
| Collector–Emitter Voltage (V<sub>CES</sub>) | 650 V static6.arrow.com+6 st.com+6 alltransistors.com+6 |
| Continuous Collector Current (I<sub>C</sub>) | 80 A @ 100 °C (120 A @ 25 °C) |
| Pulsed Collector Current | 300 A (1 µs pulses) |
| Saturation Voltage (V<sub>CE(sat)</sub>) | 1.6 V typical @ 80 A |
| Gate–Emitter Voltage (V<sub>GE</sub>) | ±20 V (±30 V transient) |
| Maximum Junction Temperature (T<sub>j</sub>) | 175 °C |
| Thermal Resistance | R<sub>θJC</sub>(IGBT)=0.32 °C/W, diode=0.66 °C/W |
| Switching Energy | E<sub>on</sub> ≈2.1 mJ, E<sub>off</sub> ≈1.5 mJ @ 80 A |
| Gate Charge (Q<sub>g</sub>) | ~414 nC |
Features & Benefits
-
Designed with advanced Trench Field‑Stop technology for a balanced trade-off between conduction and switching losses
-
Fast recovery diode enables efficient operation in high-frequency circuits
-
Low V<sub>CE(sat)</sub> minimizes conduction losses
-
High thermal tolerance and safe paralleling due to positive V<sub>CE(sat)</sub> temperature coefficient and tight specifications
-
TO‑247 long‑lead package supports robust thermal performance and easy heatsinking
Common Applications
-
Solar string and central inverters
-
AC–DC converters and PFC stages
-
Motor drives and high-power variable-frequency drives
-
UPS systems, welding inverters, and industrial power supplies
Package includes:
1 x Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247