AIKQ200N75CP2 (AKQ20FCP) – 750 V, 200 A EDT2 Trench IGBT & Emitter‑Controlled Diode, PG-TO247PLUS Package
🛠️ Product Description:
The AIKQ200N75CP2, marked as AKQ20FCP, is a high-power 750 V, 200 A trench-gate IGBT featuring Infineon’s advanced EDT2 technology and an integrated emitter-controlled diode. Housed in the robust PG-TO247PLUS-3 package, it delivers outstanding power density, low saturation voltage, and efficient switching behavior—ideal for demanding industrial applications.
Designed for high-current and medium-voltage systems, this IGBT pair is perfect for three-phase inverters, motor drives, UPS systems, and welding power supplies.
⚙️ Key Specifications:
| Parameter | Value |
|---|---|
| Collector–Emitter Voltage | 750 V |
| Continuous Collector Current | 200 A |
| Saturation Voltage (VCE(sat)) | Typically 1.3 V @ 200 A |
| Package | PG‑TO247PLUS‑3 (3‑lead) |
| Technology | EDT2 trench IGBT + emitter diode |
| Maximum Junction Temperature | Up to 150°C |
| Features | High power density, low VCE(sat), short-circuit rated |
✅ Features & Benefits:
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Flexibility: Handles 750 V and 200 A in a compact package
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Efficiency: Low saturation voltage (~1.3 V) reduces conduction loss
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Integrated Diode: Simplifies inverter and half‑bridge designs
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Ruggedness: High short-circuit safety and thermal reliability
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Package Advantage: PG‑TO247PLUS offers improved cooling paths
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Advanced Technology: EDT2 trench process for fast switching
🔧 Applications:
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3-Phase drives and industrial motor controllers
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UPS systems and uninterruptible power backup
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Welding and induction heating power modules
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Solar inverters and renewable power converters
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High-power SMPS and general power electronics