Specifications
Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220
Transistor type:
N-MOSFET
Maximum voltage drain-source Uds:
100 [V]
Maximum drain current:
40 [A]
Operating temperature:
-55~150 [°C]
Drain-source resistance at 25°С:
0.04 [ohm]
Power Pd:
150 [W]
Housing:
TO-220
Maximum voltage gate-source Ugs:
±30 [V]
Model:
40N10 /RFP40N10/
Mounting:
THT
Diode:
no