- Type Designator: TIP102
- The material of Transistor is Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 80 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 100 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 4 MHz
- Forward Current Transfer Ratio (hFE), MIN: 1000
- Package: TO220