Description
Marked "20N60FJD2" on the package with the SL logo and "D-Well™" branding, this matches Hangzhou Silan Microelectronics' SVS20N60FJD2, part of their SVS20N60FJ(K)(T)(PN)(S)(P7)D2 product family. It's an N-channel enhancement mode high-voltage power MOSFET built on Silan's super junction MOS technology, which achieves low conduction loss and switching losses. The specific "FJD2" suffix corresponds to the isolated TO-220FJ-3L package variant, with the marking code "20N60FJD2" and halogen-free construction confirmed in Silan's own ordering information table.
The "D-Well" branding on the package likely refers to a private-label or distributor rebrand of the underlying Silan die — the electrical characteristics and marking code match Silan's part exactly, so this should be treated functionally as the SVS20N60FJD2.
Key Specifications
- Type: N-Channel Enhancement Mode Super Junction Power MOSFET
- Manufacturer: Silan Microelectronics (rebadged as "D-Well")
- Package Marking: 20N60FJD2
- Package: TO-220FJ-3L, isolated, through-hole
- Drain-Source Voltage (VDS): 600V
- Drain Current (ID): 20A
- Gate-Source Voltage (VGS): 30V max
- Gate Threshold Voltage (Vgs(th)): 4V max
- RDS(ON), max: 0.19Ω
- Power Dissipation: 45W
- Total Gate Charge (Qg): 39nC
- Max Junction Temperature: 150°C
- Compliance: Halogen-free
Common Applications
- Switch-mode power supplies (SMPS)
- Motor drive circuits
- Power converters requiring 600V-class blocking voltage
- Industrial and consumer switching applications where isolated TO-220 mounting is needed
Package Includes
- 1 x Silan SVS20N60FJD2 ("D-Well" 20N60FJD2) N-Channel MOSFET (TO-220FJ-3L, isolated)